Topic: Plasmon in semiconductor nanostructures
Speaker: Chen Jianing, reasearcher, Institute of Physics, Chinese Academy of Sciences
Time: 11.27(Wednesday) 15:30
Location: 504, Life Science Building, South District
Hosted by: Institute of Atomic and Molecular Physics
Introduction:
Chen Jianing, researcher, doctoral supervisor. Born in Dalian, Liaoning in January 1981, native of Wuxi, Jiangsu. He graduated from Dalian University of Technology with a Bachelor of Applied Physics and a Ph.D. in Condensed Matter Physics from Dalian University of Technology. Later, he worked as a postdoc at Lunds Universitet in Sweden and the Spanish National Research Council. Since 2013, he was also employed by the National Natural Science Foundation of China as a researcher at the Institute of Physics, Chinese Academy of Sciences. Won the Lu Jiaxi Young Talent Award of the Chinese Academy of Sciences. He is currently a professor at the University of Chinese Academy of Sciences, the chief scientist of the Ministry of Science and Technology Key Research and Development Program, a director of the Chinese Optical Society, the Secretary-General of the Optical Physics Committee of the Chinese Physical Society, and a member of the Chinese Young Scientists Association.
Research direction:
Near-field optical imaging of visible and infrared band materials, near-field infrared absorption spectroscopy, time-resolved near-field spectroscopy, and various effects produced by the interaction of light and matter on the nanoscale. Part of the work is included in journals such as Nature, Science, Advanced Materials, Nature Communications, Nano Letters, Small, Journal of the American Chemical Society and Physical Review Letters. A single article is cited up to 1077 times.
Abstract:
In this report, I first introduce the characteristics and advantages of near-field optical microscopes. Then review the progress of low-dimensional nanomaterial plasmon research work, such as graphene and carbon nanotubes. Including the electrical control of plasmons, the influence of defects, the wavefront manipulation in the two-dimensional plane, the coupling of plasmons and substrate phonons, the electroacoustic coupling between two-dimensional material layers, the role of boundary electronic states, etc. aspect. After that, I will introduce the low-loss propagation plasmons observed on traditional III-V semiconductor nanowires from real space, and their relationship with the geometric dimensions of the nanowires and the surrounding dielectric environment. The significance of the observation of low-loss plasmons in traditional semiconductor materials is to prove that as long as the semiconductor can be effectively doped, the propagation of plasmons similar to metals can be achieved in semiconductor materials. Because we can use traditional electrical means to modulate the doping concentration of semiconductors, it is possible to use electronic control means to control semiconductor plasmons and realize electric field manipulation of the light field. This is a research in various fields of subwavelength optics. And application is critical.
