Topic: Strategies Towards the Synthesis of Wafer Scale Single Crystalline 2D materials—From Theoretical Prediction to Experimental Realization
Reporter: Prof. Ding Feng
Time: 14:00 pm, June 5, 2019
Location: 504 Lecture Hall, Life Science Building
Hosted by: Institute of Atomic and Molecular Physics College of Physics
Introduction:
Feng Ding obtained his Bs, Ms and PhD degrees from Huazhong University of Science and Technology, Fudan University and Nanjing University, respectively. Then he became a Postdoctoral Research Fellow in Gothenburg University and Chalmers University in Sweden. From 2005, he joined Rice University as a Research Scientist until the end of 2008. From 2009-2016, he joined the Hong Kong Polytechnic University as an Assistant Professor and Associate Professor. From 2017, he joined UNIST as a Distinguished Professor and the IBS-CMCM as a group leader.
Prof. Ding’s research group in UNIST’s research interests mainly focus on the computational method development for materials science applications, theoretical exploration of various carbon materials and 2D materials, especially on their formation mechanism, the kinetics of their nucleation, growth and etching. Prof. Ding has published more than 220 SCI papers in most leading journals of natural science, such as Science, Nature serious journals, Science Advances, PNAS PRL, JACS, ACIE, etc.
Abstract:
Wafer scale graphene single crystal the ideal for maximizing the performances of graphene based devices and various applciations, such as corrosion protection. Here we demonstrate a few routes and their experimental realizations towards the synthesis of wafter scale graphene crystal. (i) we showed that a single crystal graphene island may across a grain boundary of the substrate without changing its single-crystallinity. (ii) Experiemtnally, large area single crystal Cu (111) foils was synthesized and the realization of wafter scale graphene single crystal CVD growth was demonstrated. (iii) Theoretical analysis predicts that unidirectional growth of graphene on a high-index metal foil is also possible.
